Microscopic properties of H₂ diluted HWCVD deposited a-SiC:H film

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• 作者：Bibhu P. Swain and Rajiv O. Dusane
• 关键词：HWCVD ; Dielectric constant
• 刊名：Microelectronic Engineering
• 出版年：2006
• 出版时间：January 2006
• 年：2006
• 卷：83
• 期：1
• 页码：55-57
• 全文大小：155 K

文摘

Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited by hot wire chemical vapor deposition. The evolution of microscopic properties like network bonding, disorder, density and chemical composition are studied as a function of H₂ dilution. The sp² and sp³ carbon clusters, hydrogen content and the density of the material has significant effect on the dielectric properties like the leakage current of M/a-SiC:H/Si MIS structures made with both Cu and Al metal electrode. A higher leakage current is observed in the case of Cu electrode. These changes are important for its applicability as a low dielectric constant barrier material in microelectronic devices.