The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions
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- 作者：A.P. Kovchavtsev ; A.A. Guzev ; A.V. Tsarenko ; Z.V. Panova ; M.V. Yakushev ; yakushev@isp.nsc.ru" class="auth_mail" title="E-mail the corresponding author ; D.V. Marin ; V.S. Varavin ; V.V. Vasilyev ; S.A. Dvoretsky ; I.V. Sabinina ; Yu.G. Sidorov
- 关键词：HgCdTe (MCT) ; Molecular-beam epitaxy (MBE) ; Heterostructure ; p-on-n photodiode ; n-on-p photodiode ; Infrared detector
- 刊名：Infrared Physics & Technology
- 出版年：2015
- 出版时间：November 2015
- 年：2015
- 卷：73
- 期：Complete
- 页码：312-315
- 全文大小：533 K
文摘
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The temperature dependences of the reverse current of CdxHg1−xTe of “p-on-n” and “n-on-p” junctions are presented.
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Experimental data have shown close agreement with theory.
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Parameters of deep levels were estimated.