Advanc
ed
el
ectronic d
evic
es bas
ed on III-N s
emiconductors, particularly th
es
e op
erat
ed at th
e high pow
er and high fr
equ
ency or corrosiv
e atmosph
er
e, n
eed
elaboration of n
ew t
echnology for contacts m
etallization which ar
e th
ermally and ch
emically stabl
e. P
erform
ed studi
es aim
ed at th
e d
ev
elopm
ent of mat
erials for applications in th
e improv
ed m
etallization. Du
e to th
e uniqu
e combination of th
e m
etallic
el
ectro-th
ermal conductivity and c
eramic r
esistanc
e to oxidation and th
ermal stability, th
e MAX phas
es w
er
e chos
en as th
e mat
erials pot
entially applicabl
e to this task. Particular int
er
est li
es in th
e MAX phas
es bas
ed on th
e Ti, Si and C or N atoms,
esp
ecially on th
e Ti
3SiC
2 phas
e. Th
e pap
er focus
es on a compr
eh
ensiv
e charact
erization of films grown by m
eans of high-t
emp
eratur
e magn
etron Ti, Si and C co-sputt
ering. Th
e compl
em
entary charact
erization by X-ray diffraction (XRD) and X-ray absorption sp
ectroscopy (XAS) is pr
es
ent
ed.
XRD studies pointed out the presence of several phases in the investigated samples, therefore XAS as an atomic sensitive probe was applied to examine the average atomic order around Ti atoms as a function of the technological parameters and to point towards proper procedures to achieve the appropriate stoichiometry around Ti atoms and finally the Ti3SiC2 phase.