Mn₄Si₇ nanoinclusions in Mn-implanted Si

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• 作者：P. Romanowski ; J. Bak-Misiuk ; K. Sobczak ; P. Dziawa ; E. Dynowska ; A. Szczepanska ; A. Misiuk
• 关键词：Si ; Mn ; Annealing ; Nanoinclusions ; X-ray diffraction ; TEM ; Ferromagnetism
• 刊名：Radiation Physics and Chemistry
• 出版年：2013
• 出版时间：December, 2013
• 年：2013
• 卷：93
• 期：Complete
• 页码：67-71
• 全文大小：1154 K

文摘

Silicon single crystals were implanted with 160 keV Mn⁺ ions to a dose of 1¡Á10¹⁶ cm^?2 and next annealed for 1 h up to 1070 K under ambient pressure. Glancing incidence diffraction research performed using synchrotron radiation indicated that the post-implantation treatment influenced the creation of Mn₄Si₇ nanoinclusions. The dimensions and concentration of these inclusions, calculated from distribution of the X-ray diffuse scattering intensity are dependent on annealing temperature. The sizes and shapes of the inclusions were also determined by high-resolution transmission electron microscopy. Magnetic properties of the Si:Mn samples were studied using superconducting quantum interference device. The origin of ferromagnetic ordering is discussed in terms of the size of nanoinclusions.