The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films
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- 作者：Julius Rombacha ; rombach@pdi-berlin.de" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Alexandra PapadogianniaAuthor Vitae ; Markus MischobAuthor Vitae ; Volker CimallacAuthor Vitae ; Lutz KirstecAuthor Vitae ; Oliver Ambacherb ; cAuthor Vitae ; Theresa BertholddAuthor Vitae ; Stefan KrischokdAuthor Vitae ; Marcel HimmerlichdAuthor Vitae ; Sö ; ren SelveeAuthor Vitae ; Oliver BierwagenaAuthor Vitae
- 关键词：Surface electron accumulation layer ; Doping ; MBE ; Conductometric gas sensors ; Indium oxide ; Ozone sensors
- 刊名：Sensors & Actuators: B. Chemical
- 出版年：2016
- 出版时间：29 November 2016
- 年：2016
- 卷：236
- 期：Complete
- 页码：909-916
- 全文大小：1728 K
文摘
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Semiconductor science approach for fundamental study on conductometric gas sensors.
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Single-crystalline In2O3 films as a model system to study their conductometric ozone-response.
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Only surface electron accumulation layer responsible for sensing, no sensing with depleted surface.
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Deep acceptor (Mg) doping increases sensitivity by reducing gas-insensitive, parallel bulk conductance.
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Same concept proposed for other metal oxides with surface accumulation layer.