An enhanced MOSFET threshold voltage model for the 6-300 K temperature range

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• 作者：Nguyen Cong Dao^a ; ^{nguyen.dao@sydney.edu.au} ; Abdallah El Kass^a ; Mostafa Rahimi Azghadi^a ; Craig T. Jin^a ; Jonathan Scott^b ; Philip H.W. Leong^a
• 关键词：Cryogenic electronics ; Threshold voltage ; MOSFETs
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：36-39
• 全文大小：674 K
• 卷排序：69

文摘

A threshold voltage model for MOSFETs operating from 6 K to 300 K is proposed. The freeze-out effect and the field-assisted ionization are included in the model. A simple function predicting short channel effects with temperature is presented.