Ultra-low power non-volatile resistive crossbar memory based on pull up resistors

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• 作者：Shawkat Ali^a ; Jinho Bae^a ; ^{baejh@jejunu.ac.kr} ; Chong Hyun Lee^a ; Sangho Shin^b ; Nobuhiko P. Kobayashi^c
• 关键词：NVRRAM ; PVP ; EHD ; Resistive switching ; Pull-up resistor
• 刊名：Organic Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：41
• 期：Complete
• 页码：73-78
• 全文大小：1631 K
• 卷排序：41

文摘

A 3 × 3 memory array comprised of crossbar memristors and a pull-up resistor connected to each column bar was proposed. The memristor was fabricated by utilizing Poly(4-vinylphenol) (PVP) material. High OFF/ON resistance ratio of ∼1000 with high resistance state of 10 GΩ and low resistance state of 10 MΩ was achieved. The proposed crossbar memory consumed ultra-low power (< 8.33 nW) during operation.