Hot-wire CVD of Ge nanoparticles on Si-etched silicon dioxide

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• 作者：Joseph M. McCrate^a ; Navneethakrishnan Salivati^a ; John G. Ekerdt ; ^a ; ^{ekerdt@che.utexas.edu}
• 关键词：A1. Defects ; A1. Nanostructures ; A1. Nucleation ; A3. Hot-wire chemical vapor deposition ; B2. Silica ; B2. Germanium
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 April 2011
• 年：2011
• 卷：321
• 期：1
• 页码：131-135
• 全文大小：850 K

文摘

Germanium nanoparticles are grown on SiO₂ by hot-wire chemical vapor deposition of GeH₄. Etching of the silica surface by low doses of SiH_x (x=1, 2, 3) prior to Ge deposition is found to increase the nanoparticle density by up to an order of magnitude. This result is attributed to the creation of defects during the etching reaction in proportion to the SiH_x flux that serve as nucleation sites for Ge particles. Mean particle sizes of 5 nm and areal densities over 1×10¹² cm⁻² are obtained using these techniques.