Electrical and optical properties of 12CaO·7Al₂O₃ electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering

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• 作者：P.H. Tai ; C.H. Jung ; Y.K. Kang ; D.H. Yoon
• 关键词：Transparent conducting oxides (TCOs) ; C12A7 electride ; TEOLEDs
• 刊名：Thin Solid Films
• 出版年：2009
• 出版时间：1 October 2009
• 年：2009
• 卷：517
• 期：23
• 页码：6294-6297
• 全文大小：316 K

文摘

12CaO·7Al₂O₃ electride (C12A7:e⁻) doped indium tin oxide (ITO) (ITO:C12A7:e⁻) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e⁻ chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e⁻ thin film was higher than 70 % in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 × 10²⁰ cm^− 3 to 2.1 × 10¹⁸ cm^− 3 and increase of the resistivity from 1.4 × 10^− 3 Ω cm to 4.1 × 10^− 1 Ω cm were observed with increasing number of C12A7:e⁻ chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm²·V^− 1·s^− 1 to 5.13 cm²·V^− 1·s^− 1. The work function of the ITO thin film was reduced by doping it with C12A7:e⁻.