Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

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• 作者：Cong Ye¹ ; Jiaji Wu¹ ; Gang He² ; ^{ganghe01@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Jieqiong Zhang³ ; Tengfei Deng¹ ; Pin He¹ ; Hao Wang¹ ; ^{nanoguy@126.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：RRAM (resistive random access memory) ; Transition metal oxide ; Conductive filament ; Resistive switching
• 刊名：Journal of Materials Science & Technology
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：32
• 期：1
• 页码：1-11
• 全文大小：3450 K

文摘

This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching (RS) behavior can be roughly classified into the conducting filament type and the interface type. Here, we adopt the filament type to study the metal oxide based resistive switching memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect (ECM) and valence change memory effect (VCM). At the light of the influence of the electrode materials and switching layers on the RS characteristics, an overview has also been given on the performance parameters including the uniformity, endurance, the retention, and the multi-layer storage. Especially, we mentioned ITO (indium tin oxide) electrode and discussed the novel RS characteristics related with ITO. Finally, the challenges resistive random access memory (RRAM) device is facing, as well as the future development trend, are expressed.