Electromagnetically induced grating via coherently driven the n-doped In0.47Ga0.53As semiconductor quantum well nanostructure
详细信息 查看全文
- 作者：Tayebeh Naseri tayebe.naseri@gmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Electromagnetically induced transparency (EIT) ; Electromagnetically induced grating (EIG) ; Semiconductor quantum well nanostructure ; Asymmetric quantum well ; Three-level ladder-type system
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：94
- 期：Complete
- 页码：187-195
- 全文大小：629 K
文摘
- •
A new scheme for investigating the EIG in a three-level ladder-configuration n-doped in 0.47Ga0.53As semiconductor quantum well is presented.
- •
It is shown that the first-order diffraction intensity sensitively depends on the intensity of coupling fields, detuning of applied laser fields and interaction length.
- •
A very novel result shows the considerable efficiency of higher order diffractions is significantly improved via relative phase between applied laser fields.
- •
It is found that the intensity of the switching and coupling fields can increase the efficiency of the phase grating in the present model.
- •
The present model may be instructive to design new photonic devices in optical switching and imaging