Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

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• 作者：K. Prabakaran^a ; R. Ramesh^a ; M. Jayasakthi^a ; S. Surender^a ; S. Pradeep^a ; M. Balaji^c ; K. Asokan^d ; K. Baskar^a ; ^b ; ^{drbaskar2009@gmail.com} ; ^{karanphy07@gmail.com}
• 关键词：InGaN ; Quantum well ; Electronic excitation ; Intermixing effects ; Photoluminescence
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：394
• 期：Complete
• 页码：81-88
• 全文大小：2524 K
• 卷排序：394

文摘

Effects on InGaN/GaN QW structures by Au7+ (100 MeV) ion have been investigated. Structural defects of the irradiated InGaN/GaN QW structures are determined. The intermixing effect in irradiated InGaN/GaN QW structures were understood. Modified luminescence was observed in the PL spectra due to heavy ion irradiation. Surface modification was observed due to the heavy ion irradiation.