Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices

详细信息    查看全文

• 作者：Dong Liu^a ; ^b ; Daniel Francis^c ; Firooz Faili^c ; Callum Middleton^a ; Julian Anaya^a ; James W. Pomeroy^a ; Daniel J. Twitchen^c ; Martin Kuball^a ; ^{Martin.Kuball@bristol.ac.uk" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Compound semiconductors ; Diamond films ; Microstructure ; Thermal conductivity
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：57-60
• 全文大小：712 K

文摘

The impact of seeding of the diamond growth on the microstructural properties of GaN-on-diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning electron microscopy imaging. Microstructural studies revealed that the seeding conditions are a critical parameter to obtain an optimal material, allowing the manufacture of GaN-on-diamond wafers with no microscopic defects and with structural stability under thermal annealing at 825 °C. The use of the right seeding conditions also results in homogeneous thermal properties across four inch GaN-on-diamond wafers, which is of critical importance for their use for ultra-high power microwave electronic devices.