Tuning the properties of ALD-ZnO-based rectifying structures by thin dielectric film insertion - Modeling and experimental studies

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• 作者：Tomasz A. Krajewski^a ; ^{krajew@ifpan.edu.pl} ; Petro S. Smertenko^b ; Grzegorz Luka^a ; Dymitr Snigurenko^a ; Krzysztof Kopalko^a ; Elzbieta Lusakowska^a ; Rafal Jakiela^a ; Elzbieta Guziewicz^a
• 关键词：Oxide materials (ZnO) ; Thin films ; Heterojunctions ; Electrical transport ; Recombination and trapping ; Semiconductors
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 February 2017
• 年：2017
• 卷：693
• 期：Complete
• 页码：1164-1173
• 全文大小：2457 K
• 卷排序：693

文摘

Zinc oxide layers exhibiting low electron concentration have been obtained by ALD. Two types of ZnO-based rectifying structures have been constructed and examined. The role of dielectric interlayer in the ZnO-based junctions has been investigated. The injection and recombination mechanisms in the junctions have been identified. Beneficial role of charge trapping phenomena in the dielectric has been described.