Multifunctional Dielectric Layers for the Fabrication of Ultra-Simplified n-PERT c-Si Solar Cells

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• 作者：Raphaë ; l Cabal ; Thomas Blé ; vin ; Ré ; mi Monna ; Yannick Veschetti ; Sé ; bastien Dubois
• 关键词：silicon ; passivated emitter rear totally diffused ; solar cell ; co-diffusion ; boron silicate glass ; passivation ; doped silicon nitride
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：684-690
• 全文大小：489 K

文摘

Bifacial solar cell n-PERT concept involves boron and phosphorus doped regions requiring both proper surface passivation. In order to reduce n-PERT technology related €/W, one way considered is to simplify cell process-flow. In order to do so, we developed passivating/ anti-reflective/ doping SiO_xN_y:B and SiN_x:P layers. The co-anneal of these multifunctional layers allows for (1) emitter & BSF formation, (2) subsequent doped regions passivation, (3) providing satisfying optical properties. The features of our multifunctional PECV-deposited layers are detailed. By exploiting the passivating properties of our multifunctional layers we eventually present our so-called “SOLENNA(₃)” technology. This ultimately simplified technology provides large area (243cm²) LID-free 19.8% efficient n-PERT cells with only 7 processing steps. This is to the authors’ knowledge the simplest n-PERT process ever introduced with such a high level of performance. Finally, the cost calculation based on a 100MW line capacity and confronting SOLENNA₍₃₎ to referent technologies was completed. Due to its simplicity, it was shown that SOLENNA₍₃₎ technology can compete with the classical Al-BSF technology in terms of cost per watt at the module level.