A laser induced forward transfer process for selective boron emitters

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• 作者：S. Fernandez-Robledo ; ^{Susana.Fernandez.Robledo@ise.fraunhofer.de} ; J. Nekarda ; A. Bü ; chler
• 关键词：Boron ; LIFT ; n-type solar cells ; Laser doping ; Selective emitter ; Diffusion
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：161
• 期：Complete
• 页码：397-406
• 全文大小：957 K
• 卷排序：161

文摘

A LIFT process is proposed to form a boron-doped selective emitter (SE). Surface dopant concentrations of up to Ns≈1x1021 cm–3 were achieved by using LIFT. The i-Voc is 6.7 mV higher when applying LIFT under metallized emitter regions. Crystal lattice compressive stress after LIFT is released by a BBr3 diffusion. The η of solar cell simulated with SE is 0.3% higher than with homogeneous emitter.