Organic passivation of silicon through multifunctional polymeric interfaces

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• 作者：Mariela Lizet Castillo^a ; Asli Ugur^b ; Hossein Sojoudi^c ; Nathan Nakamura^d ; Zhe Liu^e ; Fen Lin^e ; Riley E. Brandt^a ; Tonio Buonassisi^a ; B. Reeja-Jayan^d ; Karen K. Gleason^b ; ^{kkgleasn@mit.edu}
• 关键词：Silicon ; Organic passivation ; Chemical vapor deposition ; Solar cells
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：160
• 期：Complete
• 页码：470-475
• 全文大小：598 K
• 卷排序：160

文摘

We demonstrate a novel solvent-free, low temperature (<25–170 °C) approach using chemical vapor deposition (CVD) grafting and polymerization processes to passivate the unpaired electrons or “dangling” bonds on the surface of silicon. Our low temperature passivation demonstrated several orders of magnitude improvement in minority carrier lifetime (>2 ms) compared to bare silicon (~30 μs). The highly reproducible passivation quality achieved at low temperatures approaches that of SiNx (deposited at temperatures between 400–800 °C) and remained stable in air for >200 h. The passivation processes are shown to reduce surface recombination chemically by reducing density of surface states and electrostatically by altering band bending at the silicon interface. Passivation quality improved on grafting using aliphatic monomers compared to aromatic ones suggesting a reduction in steric effects in the former. The ability to create multifunctional dielectric and electronically conducting passivating layers creates a direct interface between traditional silicon microelectronics and organic electronics. Applications include dielectric antireflective coatings and patterned conducting polymer current collector grids in silicon solar cells, “lab-on-a-chip” biosensors, and light emitting diodes (LEDs).