Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

详细信息    查看全文

• 作者：A.G. Zhuravlev^a ; ^b ; V.L. Alperovich^a ; ^b ; ^{alper@isp.nsc.ru}
• 关键词：Solar energy conversion ; Photoemission ; Photon-enhanced thermionic emission ; GaAs surface ; Cesium
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：3-8
• 全文大小：1274 K
• 卷排序：395

文摘

Electronic properties of Cs/GaAs surface are studied at elevated temperatures. Heating to ∼100 °С strongly affects photoemission current and surface band bending. For θ < 0.4 ML photoemission current relaxation is due to band bending. A spectral proof of the PETE process is obtained at Cs/GaAs thermal cycling.