Synthesis of RuO2 nanowires from Ru thin films by atmospheric pressure micro-post-discharge
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- 作者：D. Kuete Saaa ; c ; T. Griesb ; S. Migot-Chouxb ; J. Ghanbajaa ; D. Mangina ; P. Bouletb ; S. Laminsic ; T. Belmonteb ; thierry.belmonte@univ-lorraine.fr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Ruthenium oxide ; Nanowires ; Plasma process
- 刊名：Surface and Coatings Technology
- 出版年：2016
- 出版时间：15 June 2016
- 年：2016
- 卷：295
- 期：Complete
- 页码：13-19
- 全文大小：1942 K
文摘
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RuO2 nanowires are grown by micro-post-discharge oxidation at atmospheric pressure.
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Ruthenium thin films are deposited by pressure-modulated magnetron sputtering.
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The possibility to grow large areas of RuO2 nanowires is demonstrated.
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Inward diffusion of vacancies leads to pore distribution throughout the layer.