Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology

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• 作者：Sotirios Athanasiou^a ; ^b ; ^{athanasiou.sotiris@gmail.com} ; Charles-Alexandre Legrand^a ; Sorin Cristoloveanu^b ; Philippe Galy^a
• 关键词：CMOS ; Electrostatic discharges ; ESD ; FD-SOI ; Gated diode ; LBJT ; MOSFET ; SOI ; Thyristor
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：172-179
• 全文大小：3495 K
• 卷排序：128

文摘

We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (VBR) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (Vt1) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.