Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

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• 作者：Richard Krumpolec^a ; ^{krumpolec@mail.muni.cz} ; Jan Čech^a ; Jana Jurmanová ; ^a ; Pavol Ďurina^b ; Mirko Černá ; k^a
• 关键词：DCSBD ; Hydrogen plasma ; Low temperature ; SiO2 etching ; Atmospheric pressure
• 刊名：Surface and Coatings Technology
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：309
• 期：Complete
• 页码：301-308
• 全文大小：1094 K
• 卷排序：309

文摘

Plasma induced reduction and dry etching of silicon dioxide layers. Atmospheric pressure process using cold, pure hydrogen non-isothermal plasma. Simple and fast method of preparing clean, native oxide-free silicon surfaces. Only 1 min treatment can remove the native oxide film from the Si-wafer surface.