Orientation selection in MgO thin films prepared by ion-beam-deposition without oxygen gas present

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• 作者：Haonan Liu^a ; Huiping Lu^b ; Linao Zhang^a ; Zhi Wang^a ; ^{wangzhi@bit.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：MgO ; Thin films ; Ion-beam-deposition ; Orientation selection
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2015
• 出版时间：1 October 2015
• 年：2015
• 卷：360
• 期：Complete
• 页码：60-63
• 全文大小：849 K

文摘

Ion assisted MgO film has attracted much attention because of its extensive application. Most of the related work was focused on ion assisted evaporation. In this work, MgO thin films were prepared by ion beam sputtering deposition without oxygen gas present. Effects of sputtering energy, deposition temperature, deposition angle and assisting ions on the orientation were analyzed. The orientation of MgO films is found strongly dependent on these parameters. As the parameters vary, (1 1 0), (1 1 1), (1 0 0) orientation is preferred in turn. The results surface morphology indicate that assisting ions can flatten the film surface and enhance the crystallinity. This orientation selection can be attributed to the energy exchange between assisting ions, deposition atom and adatoms. The results give the possibility to modulate the orientation to meet different demands.