Spin conserved electron transport behaviors in fullerenes (C₆₀ and C₇₀) spin valves

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• 作者：Xianmin Zhang^a ; ^{zhangxm@atm.neu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Xiaowei Ai^a ; Runxin Zhang^a ; Qinli Ma^b ; Zhongchang Wang^b ; Gaowu Qin^a ; ^{qingw@smm.neu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Jiwei Wang^c ; Shouguo Wang^d ; ^{sgwang@ustb.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Kazuya Suzuki^b ; Terunobu Miyazaki^b ; Shigemi Mizukami^b
• 刊名：Carbon
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：106
• 期：Complete
• 页码：202-207
• 全文大小：1629 K

文摘

Fullerenes (C₆₀ and C₇₀) films have been fabricated by a thermal evaporation method. Raman spectra for C₆₀ and C₇₀ films were utilized to evaluate the film quality, and atomic force microscopy technique showed the roughness of both films was within the molecular scale of fullerenes. Moreover, these fullerenes (C₆₀ and C₇₀) films were successfully used to fabricate spin-valve devices with an Fe₃O₄/AlO/fullerenes (C₆₀ or C₇₀)/Co/Al stacking structure to get an insight for spin conserved electron transport behaviors in C₆₀ and C₇₀ films. The magnetoresistance (MR) effects in these devices were investigated at both room and low temperatures. As reducing measurement temperature, the MR ratios increased in both fullerenes (C₆₀ and C₇₀) based devices due to the reduction of spin scattering. It is worth noting that the MR ratio in C₆₀ based devices is around one order of magnitude larger than that of C₇₀ based devices at room temperature. The dominant reason for the larger MR ratio in C₆₀ based spin valves compared to that in C₇₀ based devices is analyzed. This study may provide some criteria for organic semiconductors selection for designing spin based organic devices.