Excitonic polaritons of zinc diarsenide single crystals

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• 作者：N.N. Syrbu^a ; ^{sirbunn@yahoo.com} ; I.G. Stamov^b ; V.V. Zalamai^c ; A. Dorogan^a
• 关键词：Semiconductor compound ; Exciton-polaritons ; Reflection and transmission spectra ; Excittonic levels
• 刊名：Physica B: Condensed Matter
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：506
• 期：Complete
• 页码：183-191
• 全文大小：1707 K
• 卷排序：506

文摘

Excitonic polaritons of ZnAs2 single crystals had been investigated. Parameters of singlet excitons with Г2¯(z) symmetry and orthoexcitons 2Г1¯(y)+Г2¯(x) had been determined. Spectral dependencies of ordinary and extraordinary dispersion of refractive index had been calculated using interferential reflection and transmittance spectra. It was shown, that A excitonic series were due to hole (V1) and electron (C1) bands. The values of effective masses of electrons (mc*=0.10 m0) and holes (mv1*=0.89 m0) had been estimated. It was revealed that the hole mass mv1* changes from 1.03 m0 to 0.55 m0 at temperature increasing from 10 K up to 230 K and that the electron mass mc* does not depend on temperature. The integral absorption A (eV cm−1) of the states n=1, 2 and 3 of Г2¯(z) excitons depends on the An≈n−3 equality, which it is characteristic for S-type excitonic functions. Temperature dependences of the integral absorption of ground states for Г2¯(z) and Г2¯(х) excitons differ. The ground states of B and C excitons formed by V3 – C1 and V4 – C1 bands and its parameters had been determined.