Effect of Annealing Temperature on Nanostructured WO₃ Films on P-Si Substrate

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• 作者：M.F. Hossain^a ; ^{faruk94_ruet@yahoo.com} ; T. Takahashi^b
• 关键词：Facing target sputtering ; Annealed ; As-deposited ; Tungsten oxide ; p-Si substrate.
• 刊名：Procedia Engineering
• 出版年：2013
• 出版时间：2013
• 年：2013
• 卷：56
• 期：Complete
• 页码：702-706
• 全文大小：389 K

文摘

Nanostructured WO3 films are prepared on p-Si substrate by facing target sputtering (FTS) method with sputtering pressure, 0.1 Pa and 200W. The sample is annealed at 850 C in air with 5 C/min. The as-deposited and annealed WO3 films have been characterized by the Grazing incidence X-ray diffractometer, Field emission electron microscopy, and Ultraviolet-visible spectrophotometer. The surface morphology of the WO3 films strongly depends on the annealing temperature. An average diameter of the WO3 nanorod is 5-6 ¦Ìm long and 800 nm diameter. It is revealed from optical study that the band-gap energy of WO3 films is around 2.85 eV. The surface morphology of nanostructured WO3 films has been discussed with the increase of annealing temperature.