Defects in Cd1−xMnxGeAs2 lattice
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- 作者：Maja Romcevica ; Nebojsa Romcevica ; romcevi@ipb.ac.rs" class="auth_mail" title="E-mail the corresponding author ; Jelena Trajica ; Lukasz Kilanskib ; Witold Dobrowolskib ; Irina Valentinovna Fedorchenkoc ; Sergei Fedorovich Marenkinc
- 关键词：Chalcopyrite semiconductors ; Doping ; Manganese ; Optical spectroscopy ; Lattice dynamics ; Antisite defects
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 December 2016
- 年：2016
- 卷：688
- 期：part_PB
- 页码：56-61
- 全文大小：648 K
文摘
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Raman and far-infrared measurements of Cd1−xMnxGeAs2 samples (0 ≤ x ≤ 0.037) were done.
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Defects optical phonons at about 125, 170 and 235 cm−1 were registered.
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CdAs2 and Cd3As2 clusters and GeAs antisite defects are their most probably causes.
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GeAs are connected to energy level at 200 meV and lattice tetragonal distortion.
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Doping with small amount of Mn reduces the formation of antisite defects GeAs.