Dielectric effect of a thin SiO₂ interlayer at the interface between silicon and high-k oxides

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• 作者：Giustino ; Feliciano ; Umari ; Paolo ; Pasquarello ; Alfredo
• 关键词：73.61.&minus ; r ; 77.55.+f ; 71.15.Mb ; Si/SiO₂ interface ; Dielectric constant ; High-k dielectrics ; Density functional theory
• 刊名：Microelectronic Engineering
• 出版年：2004
• 出版时间：April, 2004
• 年：2004
• 卷：72
• 期：1-4
• 页码：299-303
• 全文大小：205 K

文摘

We investigate the dielectric permittivity of SiO₂ on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This behavior of the overlayer is found to be well reproduced by a classical two-layer model in which the pure oxide and the suboxide layer are treated as distinct dielectrics. Implications for interfaces between silicon and high-k gate oxides are discussed.