An average 20.3% with the best of 20.5% solar cell efficiency was achieved in mass production with ion implantation. Different implantation dose and annealing conditions were studied. Modeling indicates that a SBSF cell efficiency gains around 0.2% compared to the homogeneous BSF n-PERT. Cell efficiency increases to more than 20.5% was proved when field area sheet resistance higher than 100 Ω/sq. Cells with efficiency higher than 21% can be realized by optimizing sheet resistance of rear surface and improving passivation.