Investigation of short channel power Trench MOSFETs with body profile optimization

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• 作者：Li Chen ; Quanyuan Feng ; ^{fengquanyuan@163.com}
• 关键词：Trench MOSFET (U-MOSFET) ; specific on-resistance (Rds ; on) ; channel doping profile ; short channel
• 刊名：Energy Procedia
• 出版年：2011
• 出版时间：2011
• 年：2011
• 卷：13
• 期：Complete
• 页码：4557-4561
• 全文大小：414 K

文摘

Power Trench MOSFET (U-MOSFET) with short channel is investigated in this paper. The total specific onresistance (Rds,on) of U-MOSFET can be reduced by shortening the channel length (Lch), we compare three means of shorting channel length by optimizing the body doping profile. Electronic parameters of these structures have been obtained by process and device simulation. The results show that the conventional short channel structure is not appropriate at low gate drive conditions, the retrograde body profile and the uniform body profile structures can both reduce the Rds,on at high and low gate drive conditions, while the uniform body profile structure will not increase the threshold voltage.