A LIFT process is proposed to form a boron-doped selective emitter (SE). Surface dopant concentrations of up to Ns≈1x1021 cm–3 were achieved by using LIFT. The i-Voc is 6.7 mV higher when applying LIFT under metallized emitter regions. Crystal lattice compressive stress after LIFT is released by a BBr3 diffusion. The η of solar cell simulated with SE is 0.3% higher than with homogeneous emitter.