CuSbS₂ thin film formed through annealing chemically deposited Sb₂S₃–CuS thin films

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• 作者：Rodrí ; guez-Lazcano ; Y. ; Nair ; M.T.S. ; Nair ; P.K.
• 关键词：A1.Characterization ; A3.Polycrystalline deposition ; B1.Inorganic compounds ; B1.Sulfides ; B2.Semiconducting ternary compounds ; B3.Heterojunction semiconductor devices
• 刊名：Journal of Crystal Growth
• 出版年：2001
• 出版时间：March, 2001
• 年：2001
• 卷：223
• 期：3
• 页码：399-406
• 全文大小：150 K

文摘

We report a method to produce CuSbS₂ thin films through a solid state reaction at 400°C involving thin films of Sb₂S₃ (0.5μm) and CuS. The precursor thin films were produced by chemical bath deposition on glass substrates. Thin films of Sb₂S₃ were deposited at 10°C using thiosulfatoantimonate(III) complex. Subsequently, thin films of CuS were deposited onto these films from a bath containing thiosulfato complex of copper and dimethylthiourea. The formation of the ternary compound upon annealing the Sb₂S₃–CuS films was confirmed by X-ray diffraction. The estimated grain diameter of the material formed is about 20nm. A direct optical band gap of 1.52eV and a p-type electrical conductivity of 0.03Ω⁻¹cm⁻¹ are evidenced. CuSbS₂ is a material investigated for ferroelectric properties (Curie temperature 93°C). The characteristics reported here also offer perspective for CuSbS₂ as an absorber material in solar cell application.