Organic/oxide hybrid complementary thin-film transistor inverter in vertical stack for logic, photo-gating, and ferroelectric memory operation

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• 作者：Chan Ho Park^c ; Hee Sung Lee^a ; Kwang H. Lee^a ; Dong-Ho Kim^b ; Hye-Ri Kim^b ; Gun-Hwan Lee^b ; Jae Hoon Kim^a ; Seongil Im^a ; ^{semicon@yonsei.ac.kr"" rel=""nofollow}
• 关键词：Vertical stack ; Logic ; Photo-gating ; Ferroelectric memory ; Organic/oxide hybrid ; Complementary thin-film transistor inverter
• 刊名：Organic Electronics
• 出版年：2011
• 出版时间：September 2011
• 年：2011
• 卷：12
• 期：9
• 页码：1533-1538
• 全文大小：798 K

文摘

We demonstrated a vertically stacked complementary thin-film transistor inverter (VS-CTFT inverter) for the purpose of maximizing potentials beyond logic applications by including photo-gating and ferroelectric memory operation with properly selected organic and oxide materials. For our VS-CTFT inverter for logic and photo-gating, we used a thermally-evaporated p-channel pentacene layer, sputter-deposited n-channel GaZnSn-based oxide (GZTO), and atomic layer deposited (ALD) Al₂O₃ dielectric. As a more advanced hybrid approach, we also adopted a ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF–TrFE)] layer for a CTFT nonvolatile memory inverter with a pentacene memory TFT which is vertically stacked on a top-gate GZTO TFT. Our VS-CTFT inverter nicely displays effective photo- and electrical-gating with a high voltage gain, dynamically operating in the low-voltage regime of 3, 5, and 8 V. The ferroelectric memory inverter as an ultimate hybrid device form demonstrates promising retention properties as triggered by ±20 V gate pulses.