Novel multi-bit memory device using metal/PVDF-TrFE/graphene stack

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• 作者：Hyeon Jun Hwang^a ; Jin Ho Yang^a ; Soo Cheol Kang^a ; Chunhum Cho^b ; Chang Goo Kang^a ; Young Gon Lee^a ; Byoung Hun Lee^a ; ^b ; ^{bhl@gist.ac.kr}
• 关键词：Graphene ; Ferroelectric ; MFG stack ; Multi-bit memory
• 刊名：Microelectronic Engineering
• 出版年：2013
• 出版时间：September, 2013
• 年：2013
• 卷：109
• 期：Complete
• 页码：87-89
• 全文大小：1052 K

文摘

Novel multi-bit memory device using a graphene/a ferroelectric polymer stack has been successfully demonstrated. The dual top gate electrodes are used to change the Fermi level of graphene by polarizing PVDF-TrFE layer. Two different polarization states in the same graphene channel generate four states of junction combinations, resulting in four channel resistance values. Four different states are maintained up to 1000 s and 100 cycles of endurance has been confirmed. This device can be utilized in high performance memory device with high bit density per memory cell since the response time of ferroelectric polymer is faster than 10 ns.