Study on the impact of device parameter variations on performance of III-V homojunction and heterojunction tunnel FETs
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- 作者：Maedeh Hemmata ; m.hemmat92@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Mehdi Kamala ; mehdikamal@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Ali Afzali-Kushaa ; b ; afzali@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Massoud Pedramc ; pedram@usc.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：Homojunction tunnel FETs ; Heterojunction tunnel FETs ; Reliability ; Monte Carlo simulations ; Parameter variations ; InAs ; GaAsSb
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：124
- 期：Complete
- 页码：46-53
- 全文大小：1364 K
文摘
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Impact of physical parameter variations on the electrical features of III-V TFETs.
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InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET.
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ON-current, OFF-current, and threshold voltage as operation parameters.
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TFETs are considerably sensitive to the doping of the source and gate work function.
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Heterojunction TFETs are less sensitive compared to the homojunction TFETs.