Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

详细信息    查看全文

• 作者：E. Piatti^a ; S. Galasso^a ; M. Tortello^a ; J.R. Nair^a ; C. Gerbaldi^a ; M. Bruna^b ; ¹ ; S. Borini^b ; ¹ ; D. Daghero^a ; R.S. Gonnelli^a ; ^{renato.gonnelli@polito.it}
• 关键词：Few-layer graphene ; EDL gating ; Liquid gating ; Transport properties ; Scattering lifetime ; Surface modification
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：37-41
• 全文大小：1182 K
• 卷排序：395

文摘

We fabricated few-layer graphene FETs by mechanical exfoliation and standard microfabrication techniques. We employed a Li-TFSI based ion gel to induce carrier densities as high as ≈6e14 e−/cm2 in the devices' channel. We found a strong asymmetry in the sheet conductance and mobility doping dependences between electron and hole doping. We combined the experimental results with ab initio DFT calculations to obtain the average scattering lifetime of the charge carriers. We found that the increase in the carrier density and an unexpected increase in the density of charged scattering centers compete in determining the scattering lifetime.