Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
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- 作者：C. Navarro ; carlosnm@ugr.es ; S. Barraud ; S. Martinie ; J. Lacord ; M.-A. Jaud ; M. Vinet
- 关键词：FDSOI ; Reconfigurable FET ; Polarity gate ; Reversible FET ; RFET ; Schottky barrier
- 刊名：Solid-State Electronics
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：128
- 期：Complete
- 页码：155-162
- 全文大小：2241 K
- 卷排序：128
文摘
Reconfigurable FETs (RFETs) are optimized in planar Fully Depleted (FD) SOI. Their basics, electrostatics and performance are studied and compared with standard 28 nm FDSOI and other RFETs results in the literature. The main challenge for future broad adoption is analyzed and commented. Finally, some tips to improve the performance such as the asymmetric silicidation at source/drain are discussed.