Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

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• 作者：K.P. Pradhan^a ; ^{k.p.pradhan@ieee.org} ; M.G.C. Andrade^b ; ^{gloria@sorocaba.unesp.br} ; P.K. Sahu^a ; ^{pksahu@nitrkl.ac.in}
• 关键词：Trigate FinFET ; Hybrid FinFET ; Symmetrical dual-k spacer ; Analog/RF ; Short channel effects (SCEs)
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：335-341
• 全文大小：1553 K
• 卷排序：100

文摘

The pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs. Maximum of 1.23× improvement in Ion, and around 60% reductions in Ioff for the Hybrid FinFETs. The analog/RF FOMs like gm, AV, and fT are also carefully observed. The hybrid FinFETs with higher Llk:Lhk ratios are outperformed. The primary drawback of the high-k spacer devices is a larger Cgg value.