Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes

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• 作者：Munkhsaikhan Zumuukhorol^a ; Zagarzusem Khurelbaatar^a ; ^b ; Shim-Hoon Yuk^a ; Jonghan Won^c ; Sung-Nam Lee^d ; Chel-Jong Choi^a ; ^{cjchoi@jbnu.ac.kr}
• 关键词：Ge MSM photodetector ; Dark current ; NPDR ; 1/f noise ; Electric field crowding ; Current crowding
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：60-65
• 全文大小：1167 K
• 卷排序：69

文摘

Effect of finger geometry on 1/f noise and NPDR of Ge MSM PDs was investigated. Smaller finger width/spacing leads to higher current crowding and electric field crowding. Reduction of dark current lead to an increase in NPDR. Electric field crowding causes the increase in dark current. Current crowding serve as a main source of 1/f noise.