High-performance thermal sensitive W-doped VO₂(B) thin film and its identification by first-principles calculations

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• 作者：Dongyun Wan^a ; Ping Xiong^a ; Lanli Chen^a ; Siqi Shi^a ; ^b ; ^{sqshi@shu.edu.cn} ; Ahmad Ishaq^c ; Hongjie Luo^a ; ^b ; Yanfeng Gao^a ; ^{yfgao@shu.edu.cn}
• 关键词：VO2(B) thin films ; Tungsten doping ; Uncooled infrared (IR) detector ; First principles study
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：397
• 期：Complete
• 页码：30-39
• 全文大小：3837 K
• 卷排序：397

文摘

High performance W-doped VO2(B) thin films were first achieved by co-sputtering. Mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO2 (B) favors the strain control. Achieved VO2 films possess high thermal sensitivity (TCR: −3.9%/K & R0: 32.7 kΩ).