Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition
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- 作者：Roger Jia ; jiaroger@mit.edu" class="auth_mail" title="E-mail the corresponding author ; Eugene A. Fitzgerald
- 关键词：A1. Interfaces ; A3. Metalorganic chemical vapor deposition ; B2. Semiconducting gallium arsenide ; B2. Semiconducting germanium ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 February 2016
- 年：2016
- 卷：435
- 期：Complete
- 页码：50-55
- 全文大小：2149 K
文摘
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GaAs/Ge superlattices were grown in MOCVD under a range of conditions.
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Lower temperature or higher pressure allows growth of smooth Ge layers on GaAs.
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Higher temperature is required to grow complete films of GaAs on Ge.