The isochronal annealing of irradiated n-channel power VDMOSFETs

详细信息    查看全文

• 作者：Goran S. Ristić^a ; ^{goran.ristic@elfak.ni.ac.rs" class="auth_mail" title="E-mail the corresponding author} ; ; Marko Andjelković^a ; Svetislav Savović^b
• 关键词：Irradiation ; Isochronal annealing ; MOS transistor ; Fixed traps ; Switching traps
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：1 January 2016
• 年：2016
• 卷：366
• 期：Complete
• 页码：171-178
• 全文大小：1872 K

文摘

The threshold voltage, V_T$V_T$, as well as threshold voltage shift, ΔV_T$\mathrm{\Delta }{V}_T$, and its components, the component of threshold voltage shift due to radiation-induced fixed traps in the oxide, ΔV_ft$\mathrm{\Delta }{V}_{\mathit{ft}}$, and the component of threshold voltage shift due to radiation-induced switching traps near and at gate oxide/substrate interface, ΔV_st$\mathrm{\Delta }{V}_{\mathit{st}}$, are investigated, and fitted very well. The behavior of unannealed fraction of fixed traps during isochronal annealing is also considered. The proposed model describes unannealed fraction very well, and allows the prediction of fixed traps behavior at higher temperature. The number of defect types that are observably active during an isochronal temperature range could be found by this model, showing that isochronal annealing is competitive with isothermal annealing, which is widely used, but much more time consuming.