Electronic properties of negatively charged SiOx films deposited by Atmospheric Pressure Plasma Liquid Deposition for surface passivation of p-type c-Si solar cells
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- 作者：R. Kotipallia ; raja.kotipalli@uclouvain.be" class="auth_mail" title="E-mail the corresponding author ; P. Descampsb ; R. Delamarea ; V. Kaiserb ; G. Beaucarneb ; D. Flandrea
- 关键词：Surface passivation ; Negative fixed charges ; Interface trap charges ; Silicon dioxide films ; C-V characterization ; Solar cells
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：29 July 2016
- 年：2016
- 卷：611
- 期：Complete
- 页码：74-77
- 全文大小：635 K
文摘
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The passivation mechanism relies strongly on the post-deposition firing temperature.
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Increase in silanol concentration enhances the field effect passivation quality.
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Increase in carbon concentration deteriorates the chemical passivation quality.
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Conductance measurements reveals near interface traps due to traces of carbon.
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Dielectric constant is two times higher for films fired at 810 °C compared to 940 °C.