Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures
详细信息 查看全文
- 作者：P.I. Gaiduka ; b ; gaiduk@phys.au.dk" class="auth_mail ; J. Lundsgaard Hansena ; johnlh@phys.au.dk" class="auth_mail ; A. Nylandsted Larsena ; anl@phys.au.dk" class="auth_mail ; O.V. Korolikb ; F.L. Bregolinc ; f.lipp-bregolin@hzdr.de" class="auth_mail ; W. Skorupac ; W.Skorupa@hzdr.de" class="auth_mail
- 关键词：Carbon redistribution ; Si&ndash ; SiGe heterostructures ; Defects ; Precipitates ; Voids
- 刊名：Microelectronic Engineering
- 出版年：1 August 2014
- 年：2014
- 卷：125
- 期：Complete
- 页码：8-13
- 全文大小：1614 K
文摘
- •
Anomalous carbon segregation in strained Si/SiGe/Si structures is demonstrated.
- •
Ion implanted C atoms are collected at the Si side and depleted at the SiGe side of the structure.
- •
Plate-like defects and thin carbon flakes are formed along Si/SiGe interfaces.
- •
Raman spectra include peaks at 1600 and 2700 cm−1, associated with carbon-related phase.
- •
The concept of strain-enhanced separation of point defects and dopant precipitation is discussed.