Uprising nano memories: Latest advances in monolithic three dimensional (3D) integrated Flash memories
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- 作者：Mojtaba Joodaki joodaki@um.ac.ir" class="auth_mail" title="E-mail the corresponding author
- 关键词：NAND Flash memory ; 3D integrated Flash memory ; Bit-cost scalable (BiCS) Flash memory ; Vertical recess array transistor (VRAT) Flash memory ; Vertical gate NAND (VG-NAND) Flash memory
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：1 October 2016
- 年：2016
- 卷：164
- 期：Complete
- 页码：75-87
- 全文大小：3519 K
文摘
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The latest advances in the monolithic 3D integration of the NAND Flash memory are surveyed.
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The key technical challenges and important aspects of various designs are highlighted.
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The mechanisms that overcome the technical barriers are discussed.
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By comparing different designs, the most promising solutions are marked.
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Future prospects and expected market demand of NAND Flash memory are explained.