Non-melting annealing of silicon by CO₂ laser

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• 作者：A. Florakis ; E. Verrelli ; D. Giubertoni ; G. Tzortzis ; D. Tsoukalas
• 关键词：Laser annealing ; Boron diffusion ; Dopant activation ; CO₂ laser
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：26 February 2010
• 年：2010
• 卷：518
• 期：9
• 页码：2551-2554
• 全文大小：475 K

文摘

In this work we investigate CO₂ laser annealing at millisecond time scale for the fabrication of Ultra Shallow Junctions, able to fulfill the requirements imposed for sub-45 nm CMOS nodes. Silicon samples doped with Boron using BF₃ plasma implantation technique at low energy (0.4 and 0.6 keV) were used to ensure ultra shallow as implanted boron concentration profiles. Our aim is to achieve high electrical activation level of the dopant, while maintaining the Boron concentration profile as immobile as possible. Samples have been irradiated at a variety of annealing conditions regarding the duration of the irradiation and the power density; however, in every case the peak surface temperature was kept in the range of 1080–1320 °C. Sheet resistance measurements indicate significant enhancement in the activation levels, while chemical characterization by means of SIMS, shows very limited movement of the dopant concentration profile, especially for short pulse duration conditions.