A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS
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- 作者：Sangeeta Singh ; sangeeta.singh@iiitdmj.ac.in" class="auth_mail" title="E-mail the corresponding author ; P.N. Kondekar
- 关键词：Impact ionization MOSFET (IMOS) ; Dopantfree ; Dynamic reconfigurability ; Random dopant fluctuations (RDF)
- 刊名：Superlattices and Microstructures
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：88
- 期：Complete
- 页码：695-703
- 全文大小：2319 K
文摘
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Investigated a novel dynamically configurable electrostatically doped Si NW IMOS (E-SiNW-IMOS).
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Same device can act as E-SiNW-IMOS or E− SiNW-TFET depending on bias conditions.
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The polarity of the devices can be changed dynamically.
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Extended the dynamic reconfigurability of polarity to charge injection mechanism as well.