Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET

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• 作者：Anis Suhaila Mohd Zain ; Stanislav Markov ; Binjie Cheng ; Asen Asenov
• 关键词：Silicon-on-insulator ; Random dopant fluctuations ; Line-edge-roughness ; Work-function-variability
• 刊名：Solid-State Electronics
• 出版年：December, 2013
• 年：2013
• 卷：90
• 期：Complete
• 页码：51-55
• 全文大小：1085 K

文摘

A comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (V_TH), drain-induced-barrier-lowering (DIBL) and on-current (I_on) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor.