Ultra-thin 20 nm-PECVD-Si3N4 surface passivation in T-shaped gate InAlAs/InGaAs InP-based HEMTs and its impact on DC and RF performance
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- 作者：Peng Ding ; Chen Chen ; Wuchang Ding ; Feng Yang ; Yongbo Su ; Dahai Wang ; Zhi Jin ; jinzhi@ime.ac.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：InP-based electron mobility transistor ; Threshold voltage shift ; Cutoff frequency ; ft ; Maximum oscillation frequency ; fmax
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：123
- 期：Complete
- 页码：1-5
- 全文大小：1440 K
文摘
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Effect of surface passivation for InP-based HEMTs was studied using an ultra-thin 20 nm PECVD Si3N4 layer.
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In DC performance, after passivation, its maximum transconductance (gm,MAX) is increased up to 1200 mS/mm.
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Verified by small-signal modeling, its Cgd after passivation can be effectively limited.
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S-parameter measurements demonstrate an increase in extracted fmax up to 450 GHz after passivation.
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Its RF performance can be improved in InP-based HEMTs by using an ultra-thin 20 nm Si3N4 surface passivation.