20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications

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• 作者：J. Ajayan ^{ajayan@gmail.com}Author Vitae ; D. Nirmal ; ^{dnirmalphd@gmail.com}Author Vitae
• 关键词：High electron mobility transistor (HEMT) ; Indium phosphide (InP) ; Short channel effects (SCE) ; Side recess spacing (LSIDE) ; Terahertz monolithic integrated circuit (TMIC)
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：526-534
• 全文大小：2221 K
• 卷排序：100

文摘

An E-Mode HEMT with heavily doped In0.52Ga0.48 As S/D regions for future THz applications was proposed. Investigated the impact of strained composite channel, buried platinum technology and double δ-doping techniques. Investigated the factors influencing fT and fmax. Aggressive device scaling was done to improve the performance.