Comparison of field-effect transistors on polycrystalline and single-crystal diamonds

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• 作者：Jing Jing Wang^a ; Ze Zhao He^a ; Cui Yu^a ; Xu Bo Song^a ; Hong Xing Wang^b ; Fang Lin^b ; Zhi Hong Feng^a ; ^{ga917vv@163.com}
• 关键词：Diamond film ; p-Type channel ; RF output power ; High frequency electronics
• 刊名：Diamond and Related Materials
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：70
• 期：Complete
• 页码：114-117
• 全文大小：849 K
• 卷排序：70

文摘

Polycrystalline diamond FET exhibit maximum transconductance and DC drain current around 116.8 mS/mm and 196 mA/mm. Polycrystalline diamond FET exhibit better RF small-signal performances with fT = 3.7 GHz and fMAX = 11.9 GHz. Single crystal diamond FET provided a POUT of 450 mW/mm @ 1 GHz with 9.6 dB gain and 28.78% PAE. Polycrystalline diamond FET provided a POUT of 320 mW/mm @ 1 GHz with 8.1 dB gain and 17.81% PAE. Single crystal diamond FET shows breakdown voltage around 48 V.